 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25 Continuous Drain Current (@Tc=100 Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25 Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. ) (Note 2) (Note 1) (Note 3) ) ) (Note 1) Parameter Value 200 18 11.4 72 30 250 13.9 5.5 139 1.10 -55~+150 300 Units V A A A V mJ mJ V/ns W W/ Thermal Characteristics Value Symbol R R R JC Units Max 0.9 0.5 62.5 /W /W /W Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Typ - CS JA 1/6 REV0.2 05.6.9 SAMWIN Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ Tj Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient VGS=0V,ID=250uA ID=250uA,referenced to 25 VDS=200V, VGS=0V IDSS Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse VDS=160V, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 200 (Tc=25 unless otherwise noted) SW640 Value Test Conditions Min Typ Max Units Parameter 0.2 - V V/ - 1 100 -100 uA nA nA On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS=VGS,ID=250uA VGS=10V,ID=3.25A 2.0 0.15 4.0 0.18 V ohm Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz 1350 180 45 1750 240 60 pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) VDS=320V,VGS=10V, ID=6.5A (Note4,5) VDD=200V,ID=6.5A RG=50ohm (Note4,5) 25 80 150 70 40 6 21 50 230 300 200 55 nc n s Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET Min. - Typ. 195 1.47 Max. 18 72 1.5 - Unit. A IS=6.5A,VGS=0V IS=6.5A,VGS=0V, dIF/dt=100A/us V ns uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=18.6mH,IAS=18A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD 18A,di/dt 100A/us,VDD BVDSS, Starting TJ=25 4. Pulse Test: Pulse Width 300us,Duty Cycle 2% 5. Essentially independent of operating temperature. 2/6 REV0.2 05.6.9 SAMWIN VGS top:10V 9V 8V 7V 6V 5.5V 5V bottom:5.0V SW640 25 C ID,Drain Current [A] 10 o ID,Drain Current [A] 10 150 C o 1 Note: 1 Note: 1.250us pulse test 2.TC=25oC 1.VDS=50V 2.250us pulse test. 0.1 0.1 0.1 1 10 2 4 6 8 10 VDS,Drain-to-Source voltage [V] VGS, Gate-Source Voltage [V] Fig 1. On-State Characteristics 1.0 Fig 2. Transfer Characteristics Drain-Source On-Resistance[ohm] 0.8 IDR,Reverse Drain Current[A] 10 0.6 VGS=20V VGS=10V RDS(ON) 150 C 1 o 25 C o 0.4 0.2 Note:TJ=25 C o Note: 1.vGS=0v 2.250us test 0.0 0 10 20 30 40 50 60 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID, Drain Current[A] VSD,Source-Drain Voltage[V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 4000 3750 3500 3250 3000 2750 Ciss = Cgs+Cgd(Cds=shorted) Coss= Cds+Cgd Crss = Cgd Fig 4. On State Current vs. Allowable Case Temperature 12 10 VDS=160V VDS=100V VGS,Gate-Source Voltage [V] 8 Capacitance [pF] 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0.1 Note: VDS=40V Ciss Coss Crss 6 4 2 1.VGS=0V 2.f=1MHz. Note:ID=18A 0 0 10 20 30 40 50 1 10 VDS,Drain-Source Voltage [V] QG,Total Gate Charge [nC] Fig 5. Capacitance Characteristics (Non-Repetitve) 3/6 Fig 6. Gate Charge Characteristics REV0.2 05.6.9 SAMWIN 1.2 3.0 SW640 2.5 Drain-Source Breakdown Voltage Drain-Source On-Resistance 1.1 BVDSS[Normalized] 2.0 1.0 RDs(on)(Normalized) Note: 1.5 1.0 0.9 Note: 0.5 1.VGS=0V 2.ID=250uA 0.8 -100 -50 0 50 100 o 1.VGS=10V 2.ID=9A 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ,Junction Temperatur [ C] TJ,Junction Temperature[ C] Fig 7. Breakdown Voltage Variation vs. Junction Temperature 20 Fig 8. On-Resistance Variation vs. Junction Temperature 10 2 Operation In This Area Limted By RDS(ON) 16 ID, Drain Current[A] 10us 10 1 1ms 10ms ID, Drain Current[A] 100us 12 8 10 0 10 -1 Note: 1.Tc=25C 2.Tj=150C 3.Single Pulse 0 4 10 10 1 10 2 0 25 50 75 100 o 125 150 VD,Drain-Source Voltage[V] Tc,Case Temperature [ C] Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature 1 D = 0 .5 (t),Thermal Response 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 JC 0 .0 1 s in g le p u ls e N o te : Z 1 .Z JC (t)= 0 .9 C /w M a x o 0 .0 1 2 .D u ty F a c to r ,D = t1 /t2 3 .T j- T c = P D M * Z J C ( t) 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 Fig 11. Transient Thermal Response Curve t1 ,S q u a r e W a v e P u ls e D u r a tio n ( s e c ) 4/6 REV0.2 05.6.9 SAMWIN Same Type as DUT 300nF SW640 VGS 10V Qg Qgs Qgd 50K 200nF VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) VDS 90% 10V Pulse Generator RG DUT Vin 10% tf td(off) td(on) tr ton toff Fig 13. Switching test Circuit & Waveforms L VDS VDD BVDSS RG DUT 10V IAS VDD 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD ID(t) VDS(t) tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.2 05.6.9 |
Price & Availability of SW640
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |